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| ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic ? surface mount features description these ultrafast, soft recovery diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode fred hfa40hf60c www.irf.com 1 parameter max. units v r cathode to anode voltage 600 v i f(av) continuous forward current, t c = 55c 30 i fsm single pulse forward current, t c = 25c 150 p d @ t c = 25c maximum power dissipation 63 w t j, t stg operating junction and storage temperature range -55 to +150 c absolute maximum ratings (per leg) case style smd-1 v r = 600v v f = 1.56v q rr = 270nc di (rec) m /dt = 345a/s note d.c.= 50% rect. wave 1/2 sine wave, 60hz, p.w.= 8.33ms (isolated base) anode common anode cathode pd-91796a
2 www.irf.com hfa40hf60c dynamic recovery characteristics (per leg) @ t j = 25c (unless otherwise specified) thermal-mechanical characteristics parameter typ. max. units r thjc junction-to-case, single leg conducting ? 2.0 wt weight 2.6 ? g c/w parameter min. typ. max. units test conditions t rr1 reverse recovery time ? 54 88 ns t j = 25c see fig. t rr2 ? 94 140 t j = 125c 5 i f = 15a i rrm1 peak recovery current ? 5.6 7.8 t j = 25c see fig. i rrm2 ? 7.8 11.7 t j = 125c 6 v r = 200v q rr1 reverse recovery charge ? 180 270 t j = 25c see fig. q rr2 ? 435 650 t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 300 345 t j = 25c see fig. di (rec)m /dt2 during t b ? 190 285 t j = 125c 8 parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 600 ? ? v i r = 250a electrical characteristics (per leg) @ t j = 25c (unless otherwise specified) l s series inductance ? 2.8 ? nh measured from center of cathode pad to center of anode pad c t junction capacitance, see fig. 3 ? 24 36 pf v r = 200v i r max reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 1.0 ma v r = 480v, t j = 125c v f max forward voltage ? ? 1.43 i f = 15a, t j = -55c see fig. 1 ? ? 1.56 i f = 15a, t j = 25c ? ? 1.92 i f = 30a, t j = 25c ? ? 1.51 i f = 15a, t j = 125c v www.irf.com 3 hfa40hf60c fig. 4 - maximum thermal impedance z thjc characteristics (per leg) fig. 2 - typical reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 1 - maximum forward voltage drop vs. instantaneous forward current (per leg) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 10 100 1000 1 10 100 1000 t = 25c j reverse voltage - v (v) r t junction capacitance - c (pf) a 0.0001 0.001 0.01 0.1 1 10 100 1000 0 200 400 600 r r reverse voltage - v (v) reverse current - i (a) t = 25c j t = 125c j t = 150c j 0 0.5 1.0 1.5 2.0 2.5 3.0 forward voltage drop - v f (v) 1 10 100 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = -55c tj = 125c tj = 25c 4 www.irf.com hfa40hf60c fig. 7 - typical stored charge vs. di f /dt (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt (per leg) fig. 5 - typical reverse recovery vs. di f /dt (per leg) fig. 6 - typical recovery current vs. di f /dt (per leg) 0 30 60 90 120 150 100 1000 f di /dt - (a/s) rr q - (nc) i = 30a i = 15a i = 7.5a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 30a i = 15a i = 7.5a f f f v = 200v t = 125c t = 25c r j j 0 300 600 900 1200 100 1000 f di /dt - (a/s) rr q - (nc) i = 30a i = 15a i = 7.5a f f f v = 200v t = 125c t = 25c r j j 10 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 15a f i = 7.5a i = 30a f f v = 200v t = 125c t = 25c r j j www.irf.com 5 hfa40hf60c fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f ! " ## # $!# %% # %" ## & ' ## () (( * ' " reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust case outline and dimensions ? smd-1 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 11/2013 |
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